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| Avionics Pulsed Power Transistor, 700 Watts, 12/10/01 1.03-1.09 GHz, 32 S Pulse, 2% Duty Rev. 0 PH1090-700B Features Designed for Mode-S IFF Applications NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Absolute Maximum Ratings @ 25 C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Dissipated Power (Standard Pulse Cond.) Dissipated Power (Mode-S Pulse Train) Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT PTOT TSTG Tj Rating 65 3.0 35 2.9 700 -65 to +200 200 Units V V A kW W C C Outline Drawing Broadband Test Fixture Impedances F (GHz) TEST FIXTURE INPUT CIRCUIT 50 Z IF TEST FIXTURE OUTPUT CIRCUIT Z OF 50 Z IF () Z OF () 1.03 1.06 1.09 1.1 -j1.4 1.1 -j1.2 1.0 -j1.0 1.2 -j0.8 1.0 -j0.7 0.8 -j0.7 Avionics Pulsed Power Transistor, 700 Watts, 1.03-1.09 GHz, 32S Pulse, 2% Duty PH1090-700B 12/10/01 Rev. 0 Electrical Characteristics at 25C Standard Pulse Condition: 32S Pulse Width, 2% Duty Cycle Peak Power: 700 Watts Parameter Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Thermal Resistance Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance Symbol BVCES ICES RTH(JC) GP RL VSWR-T IC = 250 mA VCE = 50 V VCC=50 V, Pout=700 W, F=1.03, 1.09 GHz Pulse Conditions: 32s, 2% VCC=50 V, Pout=700 W, F=1.03, 1.09 GHz Pulse Conditions: 32s, 2% VCC=50 V, Pout=700 W, F=1.03, 1.09 GHz Pulse Conditions: 32s, 2% VCC=50 V, Pout=700 W, F=1.03, 1.09 GHz Pulse Conditions: 32s, 2% VCC=50 V, Pout=700 W, F=1.03, 1.09 GHz Pulse Conditions: 32s, 2% VCC=50 V, Pout=700 W, F=1.03, 1.09 GHz Pulse Conditions: 32s, 2% Test Conditions Min 80 7.5 50 -10 Max 25 0.06 5.0:1 Units V mA C/W dB % dB - Load Mismatch Stability VSWR-S - 1.5:1 - Mode-S Pulse Train: 48 Pulses of 32S "on", 18S "off" repeated every 24 mS, 6.4% Overall Duty Cycle** Peak Power: 450 Watts Parameter Thermal Resistance Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance Load Mismatch Stability Symbol RTH(JC) GP RL VSWR-T VSWR-S Test Conditions VCC=45v, Pout=450 W, F=1.03, 1.09 GHz Mode-S Pulse Train VCC=45v, Pout=450 W, F=1.03, 1.09 GHz Mode-S Pulse Train VCC=45v, Pout=450 W, F=1.03, 1.09 GHz Mode-S Pulse Train VCC=45v, Pout=450 W, F=1.03, 1.09 GHz Mode-S Pulse Train VCC=45v, Pout=450 W, F=1.03, 1.09 GHz Mode-S Pulse Train VCC=45v, Pout=450 W, F=1.03, 1.09 GHz Mode-S Pulse Train Typical 0.20 8.0 55 -13 2:1 1.5:1 Units C/W dB % dB - ** Please note, the standard PH1090-700B device will be tested in accordance with the specifications defined for the Standard Pulse Condition (32S, 2%) 2 Avionics Pulsed Power Transistor, 700 Watts, 1.03-1.09 GHz, 32S Pulse, 2% Duty PH1090-700B 12/10/01 Rev. 0 Gain & Efficiency vs POUT Vcc = 50V, Pulse Width = 32S, Duty Cycle = 2% Frequency = 1030 MHz 9.0 Gain Collector Efficiency (%) 65 Frequency = 1090 MHz 9.0 Efficiency 8.5 Gain (dB) Gain 60 Collector Efficiency (%) Collector Efficiency (%) 65 8.5 Gain (dB) Efficiency 60 8.0 55 8.0 55 7.5 50 7.5 50 7.0 45 300 400 500 Pout (watts) 600 700 800 7.0 300 400 500 600 Pout (watts) 700 45 800 Gain & Efficiency vs POUT Vcc = 45V, Mode-S Pulse Train Frequency = 1030 MHz 9.0 Gain Frequency = 1090 MHz 65 9.0 65 Collector Efficiency (%) 8.5 Gain (dB) 60 8.5 Gain Gain (dB) 8.0 Efficiency 7.5 60 8.0 Efficiency 55 55 7.5 50 50 7.0 300 350 400 450 Pout (watts) 500 45 550 7.0 300 350 400 450 Pout (watts) 500 45 550 3 Avionics Pulsed Power Transistor, 700 Watts, 1.03-1.09 GHz, 32S Pulse, 2% Duty PH1090-700B 12/10/01 Rev. 0 Broadband Circuit Dimensions Broadband Assembly Diagram Specifications subject to change without notice. North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 4 |
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